單層氧化石墨烯（H法/進(jìn)口）

單層氧化石墨烯（H法/進(jìn)口） Single Layer Graphene Oxide (H Method)
制備方法：改良的H法
直徑：1~5um
厚度：0.8~1.2nm
單層比：99%
純度：99%
堆積密度：0.44g/cm³
體積密度：為0.26g/cm³

單層氧化石墨烯（H法/進(jìn)口） Single Layer Graphene Oxide (H Method)
制備方法：改良的H法
直徑：1~5um
厚度：0.8~1.2nm
單層比：99%
純度：99%
堆積密度：0.44g/cm³
體積密度：為0.26g/cm³

^{TEM of Graphene Oxide}

^{*The TEM analysis was completed through dispersing ACS-Material Graphene Oxide into water or ethanol with the help of ultrasound}

^{TEM of Graphene Oxide}

^{*The TEM analysis was completed through dispersing ACS-Material Graphene Oxide into water or ethanol with the help of ultrasound}