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上海巨納科技有限公司 |
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13761090949 |
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
Silicon 100mm diameter, P/Boron, (100) 1-10 ohm-cm 500um SSP SEMI Prime Grade,
Bow AND Warp <30um, TTV <10um, Ra:<4nm with 285 nm thermal oxide
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