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上海巨納科技有限公司>供求商機(jī)>InTe 碲化銦晶體 (Indium Telluride)
InTe 碲化銦晶體 (Indium Telluride)
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  • InTe 碲化銦晶體 (Indium Telluride)

舉報(bào)
貨物所在地: 江蘇泰州市
產(chǎn)地: 美國
更新時(shí)間: 2024-09-19 21:00:27
期: 2024年9月19日--2025年3月19日
已獲點(diǎn)擊: 192
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產(chǎn)品簡介

The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence.

詳細(xì)介紹

The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling, enabling to isolate down to monolayers. InTe crystals exhibit TlSe-like structural transformation and thus has 2D anisotropic response much similar to ReS2, WTe2, and TiS3. Each monolayer is four atoms thick (Te-In-In-Te) that is roughly 0.9-1.0 nm. In our facilities, we have isolated InTe down to monolayer. In the literature, monolayer InTe is currently under-studied, yet to be discovered. Raman peaks are sharp and strong indicating high crystallinity.
 
Our crystals are grown by state-of-the-art growth techniques after 5 weeks and show high crystallinity. The size of the samples is typically around ~4mm in size. InTe has a layered structure with weak interlayer coupling. Single crystal InTe comes ready for exfoliation and is ideal for 2D research.
Properties of InTe layered crystals - 2Dsemiconductors USA

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