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上海巨納科技有限公司>供求商機(jī)>2D Semiconductor-氮摻雜石墨烯 Nitrogen
2D Semiconductor-氮摻雜石墨烯 Nitrogen
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  • 2D Semiconductor-氮摻雜石墨烯 Nitrogen

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貨物所在地: 上海上海市
產(chǎn)地: 美國
更新時(shí)間: 2024-09-19 21:00:27
期: 2024年9月19日--2025年3月19日
已獲點(diǎn)擊: 160
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產(chǎn)品簡介

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns.

詳細(xì)介紹

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto SiO2/Si substrates. 

Compared to pristine graphene, Nitrogen doped graphene displays G and 2D peaks at different frequencies.

Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto SiO2/Si substrates. 

Compared to pristine graphene, Nitrogen doped graphene displays G and 2D peaks at different frequencies.

    Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in the images, the flakes are ideal for exfoliation onto SiO2/Si substrates. 

    Compared to pristine graphene, Nitrogen doped graphene displays G and 2D peaks at different frequencies.

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