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KV104-液氮制冷型紅外探測器(一)
  • KV104-液氮制冷型紅外探測器(一)
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貨物所在地:北京北京市

更新時間:2024-07-03 21:00:06

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液氮制冷型紅外探測器(IR Detectors with Dewar) ---KOLMAR TECHNOLOGIES
■ KV104 Series HgCdTe Photodiodes


液氮制冷型紅外探測器(IR Detectors with Dewar) ---KOLMAR TECHNOLOGIES
■ KV104 Series HgCdTe Photodiodes 


◆ High D* at high frequencies
◆ Sizes 2.0 mm to 0.05 mm
◆ Wavelength cutoff: 11.5, 8, 4.5 μm
◆ Linear
◆ Custom configurations available




Model*

Wavelength (μm)
Peak/ Cutoff

Size(mm)

Bandwidth(Hz) 

D*(60FOV)

(Jones,typ)

Responsivity
(Amps/Watt)

KV104-1-A-3/11

10.5 />11.5

1 x 1

>20M

3.00E+10

>4

KV104-1-A-3/12

11 />12.3

1 x 1

>20M

3.00E+10

>4

KV104-1-A-3/10

9/ >10

1 x 1

>20M

5.00E+10

>4

KV104-0.5-A-3/11

10.5/ >11.5

0.5 x 0.5

>50M

3.00E+10

>4

KV104-0.25-A-1/11

10.5/ >11.5

0.25x0.25

>100M

3.00E+10

>4

KV104-0.1-1-E/11

10.5 />11.5

0.1 x 0.1

>500M

3.00E+10

>4

KV104-0.5-A-2/8

7.2 />8

0.5 x 0.5

>30M

7.00E+10

>3

KV104-1-A-7/11/TS

10.5 />11.5

1 x 1

>20M

3.00E+10

>4

KV104-1-A-5/11/TS

10.5 />11.5

1 x 1

>20M

3.00E+10

>4

■ KLD Series Linear Response MCT Detectors 


◆Linear responsivity
◆High D*
◆Sizes 2.0 mm to 0.5 mm
◆Integral amplifier for optimum linearization
◆Spectral range 2 m m to 12 m m
◆Amplifiers matched for power range
◆Custom configurations available



Model *

Wavelength (μm)

Peak / Cutoff

Size(mm dia.)

Bandwidth(Hz) 

D*(60FOV)

(Jones,typ) 

Responsivity

(Volts/mWatt)

KLD-1-J1-3/11

10.5 / 11.5

1

2M

4.00E+10

>40

KLD-1-J1-3/9

7.6 / 8.5

1

2M

6.00E+10

>32

KLD-0.5-J1-3/10/DC

9 /10

0.5x0.5

DC - 5M

8.00E+10

>40

KLD-0.5-J1-3/11/DC

10 / 11.5

0.5x0.5

DC - 5M

4.00E+10

>40

KLD-2-J1-3/11/DC

10.5 / 11.5

2

DC - 1M

4.00E+10

>40


■ MCT Photodiodes with Integral Amplifiers


◆High D* at high frequencies
◆Bandwidth to 100 MHz
◆Fast risetime: 3.5 ns
◆Sizes 2.0 mm to 0.1 mm
◆Wavelength cutoff: 11.5, 8, 4.5 μm
◆Linear
◆Custom configurations available




Model *

Wavelength (μm )

Peak / Cutoff

Size
(mm dia.)

Bandwidth

 (Hz)AC DC

D*(60FOV)

(Jones,typ)

Responsivity

(Volts/mWatt)

KMPV11-1-J1/AC

10.5 /> 11.5

1

100-20M

3.00E+10

>40

KMPV11-1-J1/DC

10.5/ > 11.5

1

DC - 20M

3.00E+10

>40

KMPV11-1-J2

10.5/ > 11.5

1

100-20M DC - 20M

3.00E+10

>40DC + 80AC

KMPV8-0.5-J2/50

  7.2 / >8

0.5 x 0.5

100-50M DC - 50M

6.00E+10

>16DC + 32AC

KMPV8-0.5-J1/DC50

  7.2 / >8

0.5 x 0.5

DC - 50M

6.00E+10

>16

KMPV11-0.5-J1/DC

10.5 / >11.5

0.5 x 0.5

DC - 20M

3.00E+10

>40

KMPV8-0.5-J1/DC

  7.2  / >8

0.5 x 0.5

DC - 20M

6.00E+10

>40

KMPV11-0.1-J1/DC100

   10.1  / >11

0.1 x 0.1

DC - 100M

2.00E+10

>16


■ Series KISD InSb Photodiodes
◆With or without integral low noise amplifiers
◆Fast rise times: 25 ns, 7 ns
◆Linear response with power
◆High detectivity
◆Custom configurations available


Model*

Size
(mm dia.)

Bandwidth

 (Hz)AC DC

D*(60FOV)

(Jones, typ)

Responsivity
nominal  

KISD-1-A-6

1

 

1.50E+11

3 A/W

KISD -2-A-6

2

 

1.50E+11

3 A/W

KISD-0.5-A-6

0.5

 

1.50E+11

3 A/W

KISDP-1-J1/AC

1

100-15M

1.50E+11

3 x 104 V/W

KISDP-1-J1/DC

1

   15M

1.50E+11

3 x 104 V/W

KISDP-1-J2

1

100-15M ,   15M

1.50E+11

3 x 104 V/W

KISDP-1-J2/E5

1

100-1.5M ,  1.5M

1.50E+11

3 x 105 V/W

KISDP-1-J2/E6

1

100-200k, 200k

1.50E+11

3 x 106 V/W

KISDP-1-J1/E6

1

 200k

1.50E+11

3 x 106 V/W

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