詳細(xì)摘要：【巨納】單層二硫化錸（10x10mm）連續(xù)薄膜-襯底可選

詳細(xì)摘要：二硒化鎢（WSe2）是和石墨烯類似的層狀二維結(jié)構(gòu)薄膜。

詳細(xì)摘要：Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21.

詳細(xì)摘要：【巨納】單層二硫化鎢（10x10mm）連續(xù)薄膜-襯底可選

詳細(xì)摘要：Our single crystal GeAs （Germanium arsenide） crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality.

詳細(xì)摘要：【巨納】三角形單層二硫化鎢（10*10mm）-襯底可選

詳細(xì)摘要：High quality monolayer MoWS? solution

詳細(xì)摘要：a-MoO3 is a layered vdW semiconductor with a crystal structure that belongs to the space group Pbnm 62 （see unit cell parameters below）. In its layered form,

詳細(xì)摘要：【巨納】基于柔性PET基底的單層連續(xù)二硫化鉬薄膜（1010mm）

詳細(xì)摘要：【巨納】基于二氧化硅基底的三角形單層二硫化鉬（10*10mm）

詳細(xì)摘要：二碘化鎳晶體（99.995%） NiI2
晶體類型：合成
晶體純度：＞99.995%

詳細(xì)摘要：The only commercially available PTAS organics. To date our PTAS materials enable many researchers to synthesize 2D CVD materials.

詳細(xì)摘要：二氯化鐵晶體（99.995%） FeCl2
晶體類型：合成
晶體純度：＞99.995%

詳細(xì)摘要：納米鹽/微米鹽

詳細(xì)摘要：Isolated monolayer thickness MoS2 are grown onto SiO2/Si substrates.

詳細(xì)摘要：Isolated monolayer thickness WS2 are grown onto c-cut （0001） sapphire substrates.

詳細(xì)摘要：Isolated monolayer thickness MoS2 are grown onto c-cut （0001） sapphire substrates.

詳細(xì)摘要：Isolated monolayer thickness WSe2 are grown onto c-cut （0001） sapphire substrates.

詳細(xì)摘要：This product contains full area coverage PtSe2 layers （single/multi） on c-cut sapphire substrates.

詳細(xì)摘要：This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates.