詳細(xì)摘要：三維石墨烯泡沫（1*1英寸）三維獨(dú)立石墨烯泡沫 3D Graphene Foam-3D Freestanding Graphene Foam
尺寸：11*1英寸
熱釋放帶溫度：120 °C

詳細(xì)摘要：ITIC represents the start of a new generation of electron-accepting small molecules for organic photovoltaic （OPV） applications.

詳細(xì)摘要：三維石墨烯泡沫（1*1厘米）-三維獨(dú)立石墨烯泡沫 3D Graphene Foam-3D Freestanding Graphene Foam
尺寸：1*1厘米
熱釋放帶溫度：120 °C

詳細(xì)摘要：High purity - PBDB-T is purified by Soxhlet extraction with methanol, hexane and chlorobenzene under an argon atmosphere.

詳細(xì)摘要：High molecular weight with high solubility and high purity - TQ1 polymer is purified by soxhlet extraction with methanol, hexane and chloroform under an argon atmosphere - polymer at its pure best

詳細(xì)摘要：Our single crystal SnS2 （Tin disulfide） crystals come with guaranteed electronic and optical grade crystal quality and purity.

詳細(xì)摘要：Single crystal highly oriented synthetic 2H-phase MoS2 crystals have been developed at our facilities in the USA starting from the powder making to crystallization.

詳細(xì)摘要：Environmentally stable 2H-TaS2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport （CVT） technique.

詳細(xì)摘要：形狀：可任意裁剪
尺寸：1*1cm/2*2cm/5*5cm/10*10cm
層數(shù)：?jiǎn)螌?br />晶粒：?jiǎn)尉?多晶，50~300um

詳細(xì)摘要：Environmentally stable anisotropic transition metal trichalcogenide material ZrS3 is available at 2Dsemiconductors USA.

詳細(xì)摘要：Antimony sulfide is the chemical compound with the formula Sb2S3 which crystallizes in an orthorhombic space group.

詳細(xì)摘要：Magnetic semiconductor FePS3 has a monoclinic structure with the factor group C2h.

詳細(xì)摘要：Our single crystal SnS （Tin sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.

詳細(xì)摘要：Single crystal 1Tphase TaS? （Tantalum disulfide） crystals come with guaranteed charge density wave （CDW） behavior.

詳細(xì)摘要：Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.

詳細(xì)摘要：Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2h.

詳細(xì)摘要：The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals: Our large size （~1cm in size） vdW WS2 crystals are treated as gold standards

詳細(xì)摘要：Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.