詳細(xì)摘要：Our single crystal SnS2 （Tin disulfide） crystals come with guaranteed electronic and optical grade crystal quality and purity.

詳細(xì)摘要：Single crystal highly oriented synthetic 2H-phase MoS2 crystals have been developed at our facilities in the USA starting from the powder making to crystallization.

詳細(xì)摘要：Environmentally stable 2H-TaS2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport （CVT） technique.

詳細(xì)摘要：形狀：可任意裁剪
尺寸：1*1cm/2*2cm/5*5cm/10*10cm
層數(shù)：?jiǎn)螌?br />晶粒：?jiǎn)尉?多晶，50~300um

詳細(xì)摘要：Environmentally stable anisotropic transition metal trichalcogenide material ZrS3 is available at 2Dsemiconductors USA.

詳細(xì)摘要：Antimony sulfide is the chemical compound with the formula Sb2S3 which crystallizes in an orthorhombic space group.

詳細(xì)摘要：Magnetic semiconductor FePS3 has a monoclinic structure with the factor group C2h.

詳細(xì)摘要：Our single crystal SnS （Tin sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.

詳細(xì)摘要：Single crystal 1Tphase TaS? （Tantalum disulfide） crystals come with guaranteed charge density wave （CDW） behavior.

詳細(xì)摘要：Tin sulfooxide is a ternary alloy belonging to M2X3 family of materials.

詳細(xì)摘要：Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2h.

詳細(xì)摘要：The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals: Our large size （~1cm in size） vdW WS2 crystals are treated as gold standards

詳細(xì)摘要：Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.

詳細(xì)摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals.

詳細(xì)摘要：Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）

詳細(xì)摘要：The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：Synthetic single crystal Tin lead disulfide （PbSnS?） is a special member of layered transitional metal dichalcogenides.

詳細(xì)摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.