Nb2SiTe4 返回列表頁

舉報評價

參考價: ￥ 7579.65

訂貨量: ≥1 片

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品牌2D Semiconductors

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更新時間：2024-06-03 12:48:46瀏覽次數：1079次

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產品簡介

供貨周期	現貨	應用領域	環(huán)保,化工,能源,綜合

Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers.

詳情介紹

Nb2SiTe4 is a layered narrow gap semiconductor. It crystallizes in monoclinic phase (P121/c1) wherein Nb and Si cations are sandwiched between Te anion atoms forming the individual layers. Nb2SiTe4 crystals are all perfectly layered and easy to exfoliate much similar to MoS2 and Bi2Te3 crystals. Overall it exhibits 0.4 eV optical band gap which has important applications towards mind-infrared and infrared technologies. Our Nb2SiTe4 crystals have been synthesized through chemical vapor transport (CVT) technique at high purity limits (99.9995% or higher) to ensure crystals are environmentally stable and optical/electronic grade. Each order comes with couple mm sized crystals as shown in the product images.