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當(dāng)前位置:泰州巨納新能源有限公司>>二維材料>>六方氮化硼晶體>> CVD銅基多層氮化硼薄膜

CVD銅基多層氮化硼薄膜

參   考   價(jià): 7579.65

訂  貨  量: ≥1  片

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品       牌2D Semiconductors

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所  在  地泰州市

更新時(shí)間:2024-06-03 16:46:08瀏覽次數(shù):899次

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Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Multilayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN


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