泰州巨納新能源有限公司
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當前位置：泰州巨納新能源有限公司>>二維材料>>六方氮化硼晶體>> CVD銅基單層氮化硼薄膜

CVD銅基單層氮化硼薄膜

參   考   價: ￥ 7579.65

訂  貨  量: ≥1 

具體成交價以合同協(xié)議為準

產(chǎn)品型號

品       牌2D Semiconductors

廠商性質(zhì)生產(chǎn)商

所  在  地泰州市

更新時間：2024-06-03 16:47:50瀏覽次數(shù)：1006次

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Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.

Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms. Our h-BN CVD process has been adopted in order that defect density has been kept low (~1E10-1E11 cm-2) and single domain sizes have been increased to reduce 1D grain boudary defect concentrations. Monolayer h-BN sheets measure ~5cm x 5cm or ~2x2 inches in size.

Properties of h-BN


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