詳細摘要：三硫化鈮晶體（99.995%） NbS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細摘要：硫鹽礦物晶體 Pb3Sn4FeSb2S14（Lead Tin Ferrum Antimony Sulfide）
晶體結構：六邊形
類型：合成
尺寸：~8mm
純度：>99.995%
屬性：超導體

詳細摘要：Rhenium atoms perfectly incorporated into MoS? matrix.

詳細摘要：Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in th

詳細摘要：Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns.

詳細摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yi

詳細摘要：Carboxyl （-COOH） functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

詳細摘要：二硫化鉛錫晶體 PbSnS2（Lead Tin Disulfide）
晶體結構：六邊形
類型：天然晶體
尺寸：~8mm
純度：>99.995%
屬性：半導體

詳細摘要：Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns.

詳細摘要：Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.

詳細摘要：二硫化鉬晶體（天然） MoS2（Molybdenum Disulfide）
晶體結構：六邊形
類型：天然晶體
尺寸：~10mm-20mm
純度：>99%
屬性：半導體

詳細摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique.

詳細摘要：Carboxyl （-COOH） functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

詳細摘要：羧基化石墨烯 Carboxyl Graphene
直徑：1~5um
厚度：0.8~1.2nm
羧基比例：5%
純度：99%

詳細摘要：工業(yè)級石墨烯 Industrial-Quality Graphene
制備方法：熱剝離還原
厚度（nm）：≤3
BET比表面積（平方米/克）：~ 600
電阻率（Ω?cm）：0.30

詳細摘要：Our TiSe2 crystals are stabilized in 2H-phase （CDW metallic phase）.

詳細摘要：Environmentally stable 2H-TaSe2 crystals have been synthesized at our facilities through flux zone method or chemical vapor transport （CVT） technique.

詳細摘要：Zirconium triselenide belongs to the group-IV transition metal trichalcogenides.

詳細摘要：Antimony triselenide is the chemical compound with the formula Sb2Se3 which crystallizes in an orthorhombic space group.

詳細摘要：Single crystal ReSxSe2（1-x） alloy rystals are developed at our facilities using chemical vapor transport or flux zone technique methods.