詳細(xì)摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals

詳細(xì)摘要：NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's magnetic response in the monolayer limit remain largely unknown.

詳細(xì)摘要：ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, exhibiting Fermi liquid behavior with two Fermi pockets at low temperatures.

詳細(xì)摘要：Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV.

詳細(xì)摘要：Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA.

詳細(xì)摘要：* environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 displays metallic and superconducting behavior.

詳細(xì)摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoS2 crystals.

詳細(xì)摘要：Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

詳細(xì)摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：一步轉(zhuǎn)移石墨烯（進(jìn)口/1*1cm單層） Trivial Transfer Graphene

詳細(xì)摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：Tungsten disulfide （2H-WS2） crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS? matrix.

詳細(xì)摘要：一步轉(zhuǎn)移石墨烯（5*5cm單層） Trivial Transfer Graphene

詳細(xì)摘要：Single crystal ReS? （Rhenium disulfide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

詳細(xì)摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.

詳細(xì)摘要：銅基底石墨烯（進(jìn)口） Graphene on Copper Foil
制備方法：氣相沉積法
化學(xué)氣相沉積石墨烯層：1/2/3~5/6~8
尺寸：可定制

詳細(xì)摘要：塑料基底石墨烯 Graphene on Plastic
說明：石墨烯轉(zhuǎn)移到塑料基材（一個(gè)聚合物主要含有聚酯和其他成分（10%））。
表面電阻：小于600Ω/sq
定制：＜300Ω/sq
透明度：> 95%

詳細(xì)摘要：石墨烯紙（非導(dǎo)電） Graphene Film-Super Paper
直徑：40毫米
厚度：20um
電導(dǎo)率：非導(dǎo)電，8x10-2 S / M
拉伸模數(shù)>20 GPa
顏色：黑色，棕色或黃色
易彎曲，靈活

詳細(xì)摘要：多層石墨烯（進(jìn)口） Multi-layer Graphene
CVD石墨烯層數(shù)：2－8
基材：銅箔/硅/二氧化硅/PET/塑料/玻璃/石英

詳細(xì)摘要：石墨烯紙（導(dǎo)電） Graphene Film-Super Paper
直徑：40毫米
厚度：20微米
導(dǎo)電性：2x103s /米
拉伸模數(shù)：>10 GPa
顏色：黑色
高導(dǎo)熱率：> 1000W／m.K
易彎曲，靈活