詳細(xì)摘要：Magnetic semiconductor MnPS3 has a monoclinic structure with the factor group C2h.

詳細(xì)摘要：The only commercially available TlGaS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：Hafnium disulfide （HfS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals: Our large size （~1cm in size） vdW WS2 crystals are treated as gold standards

詳細(xì)摘要：Our single crystal GeS （Germanium sulfide） crystals come with guaranteed optical, electronic, and structural anisotropy.

詳細(xì)摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals.

詳細(xì)摘要：Large size hexagonal phase GaTe （Gallium telluride） crystals have been developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport （CVT）

詳細(xì)摘要：The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：Synthetic single crystal Tin lead disulfide （PbSnS?） is a special member of layered transitional metal dichalcogenides.

詳細(xì)摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.

詳細(xì)摘要：14 years of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless WS2 crystals

詳細(xì)摘要：NiPSe3 is a quasi-two-dimensional antiferromagnet in the bulk form while it's magnetic response in the monolayer limit remain largely unknown.

詳細(xì)摘要：ZrSiS as a theoretically predicted and experimentally proven Dirac semimetal, exhibiting Fermi liquid behavior with two Fermi pockets at low temperatures.

詳細(xì)摘要：Gamma layered phase of In2S3 is a direct gap semiconductor with an optical band gap ranging from 2 eV - 3.25 eV.

詳細(xì)摘要：Anisotropic transition metal trichalcogenide material TiS3 is available at 2Dsemiconductors USA.

詳細(xì)摘要：* environmentally stable metallic NbS2 （niobium disulfide） crystals: NbS2 displays metallic and superconducting behavior.

詳細(xì)摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoS2 crystals.

詳細(xì)摘要：Our TiS2 crystals are stabilized in 1T ohase （semimetallic phase）.

詳細(xì)摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：一步轉(zhuǎn)移石墨烯（進(jìn)口/1*1cm單層） Trivial Transfer Graphene