詳細(xì)摘要：P-type electronically doped Bismuth Selenide （Bi?Se?） Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state.

詳細(xì)摘要：14 years of growth optimization lead to our flawless n-type WSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

詳細(xì)摘要：Years of growth optimization lead to our flawless n-type MoSe2 crystals through Au or Re doping: They are simply treated as gold standards in 2D materials field.

詳細(xì)摘要：Platinum diselenide （PtSe2） is a member of transition metal dichalcogenide （TMDCs） family with the MX2 formula.

詳細(xì)摘要：Single crystal ReSe? （Rhenium diselenide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 8 years of growth optimization to ensure anisotro

詳細(xì)摘要：Magnetic semiconductor ZnPSe3 has a monoclinic structure with the factor group C2h.

詳細(xì)摘要：高比表面積氧化石墨烯 High Surface Area Graphene Oxide
制備方法：改良的H法
高表面積氧化石墨烯
直徑：1 ~ 5um
厚度：0.8~1.2nm
單層比：99%
純度：99%
比表面積（BET）：100平方米/克
堆積密度：0.009g/cm3
所在地：上海上海市      更新時(shí)間：2024-09-19 在線留言

詳細(xì)摘要：* environmentally stable metallic NbSe2 crystals: In the bulk form, niobium diselenide is metallic.

詳細(xì)摘要：In2Se3 single crystals were grown using Physical vapor transport （PVT） as well as Bridgman technique.

詳細(xì)摘要：ZrSe2 belongs to group-IV TMDCs family and adopts a stable 2H-hexagonal structure.

詳細(xì)摘要：單層石墨烯（進(jìn)口） Single Layer Graphene
高比表面積石墨烯
制備方法：熱剝離還原與氫化還原
BET比表面積（平方米/克）：400~1000
電阻率（Ω?cm）≤0.30
分散性：利用聲波降解法可以在大多數(shù)的溶液中進(jìn)行再分散

詳細(xì)摘要：Our MoSe2 crystals are grown using two different techniques through chemical vapor transport （CVT） or flux zone growth （see description of these two methods below）.

詳細(xì)摘要：Bismuth Selenide （Bi?Se?） Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state.

詳細(xì)摘要：The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoSe2 crystals.

詳細(xì)摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimi

詳細(xì)摘要：In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct gaps. It has layered structure （lamellar） with weak interlayer coupling, enabling to isolate down to monolayers.

詳細(xì)摘要：單層氧化石墨烯乙醇溶液 Single Layer Graphene Oxide Ethanol Dispersion
制備方法：改良的H法
濃度為5mg/mL 100ml
每瓶（0.5g）
溶劑：乙醇
尺寸：0.5-2.0um
厚度：0.6-1.2nm
單層比：＞80%
顏色：棕色/黑色

詳細(xì)摘要：InSe （indium selenide） is the first commercially available InSe layered materials in the field.

詳細(xì)摘要：First commercially available CoSe2 crystals. They are perfectly layered and samples are shipped ready for exfolation.