詳細(xì)摘要：單層石墨烯（進(jìn)口） Single Layer Graphene
高比表面積石墨烯
制備方法：熱剝離還原與氫化還原
BET比表面積（平方米/克）：400~1000
電阻率（Ω?cm）≤0.30
分散性：利用聲波降解法可以在大多數(shù)的溶液中進(jìn)行再分散

詳細(xì)摘要：Our MoSe2 crystals are grown using two different techniques through chemical vapor transport （CVT） or flux zone growth （see description of these two methods below）.

詳細(xì)摘要：Bismuth Selenide （Bi?Se?） Developed at our facilities since early 2011 to optimize the perfect stoichiometry and stabilize the topological insulator state.

詳細(xì)摘要：The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique.

詳細(xì)摘要：More than a decade of growth optimization in chemical vapor transport （CVT） as well as flux growth lead to our flawless MoSe2 crystals.

詳細(xì)摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique in water dispersant solution. Growth technique emphasizes on minimi

詳細(xì)摘要：In the bulk form SnSe has band-gap at around 0.9 eV （indirect） and 1.25 direct gaps. It has layered structure （lamellar） with weak interlayer coupling, enabling to isolate down to monolayers.

詳細(xì)摘要：單層氧化石墨烯乙醇溶液 Single Layer Graphene Oxide Ethanol Dispersion
制備方法：改良的H法
濃度為5mg/mL 100ml
每瓶（0.5g）
溶劑：乙醇
尺寸：0.5-2.0um
厚度：0.6-1.2nm
單層比：＞80%
顏色：棕色/黑色

詳細(xì)摘要：InSe （indium selenide） is the first commercially available InSe layered materials in the field.

詳細(xì)摘要：First commercially available CoSe2 crystals. They are perfectly layered and samples are shipped ready for exfolation.

詳細(xì)摘要：氮摻雜有序介孔碳 N-Doped Mesoporous Carbon
制備方法：硬模板
氮摻雜的介孔碳 CMK-3
平均尺寸：1 um
碳/氮（原子）：4.3
空間群：二維六角形晶格（空間p6mm）
比表面積：500平方米/克

詳細(xì)摘要：This item is currently out of stock. Please expect 4-6 weeks lead time.

詳細(xì)摘要：無序介孔碳 Disordered Mesoporous
制備方法：硬模板法合成
比表面積（平方米/克）：600
平均孔徑（納米）：50納米
顆粒尺寸：1微米
可逆容量（第1周期）：> 800 mAhg-1
可逆容量（50周期后）：> 600 mAhg-1

詳細(xì)摘要：World's first commercially available PbGa2Se4 crystals!

詳細(xì)摘要：In the bulk form （TlSe）, Thalium selenide, has band-gap at around 0.7 eV and display strong photoluminescence.

詳細(xì)摘要：The first MoWTe2 ternary alloy.

詳細(xì)摘要：Similar to graphene and MoS?, VSe? is also layered material （layered transition metal dichalcogenide） crystallizing in the 1T-CdI2 structure.

詳細(xì)摘要：Unlike other sources, our GaSe crystals are best suited towards electronic and optical applications in 2D materials field.

詳細(xì)摘要：Our single crystal GeSe （Germanium selenide） crystals come with guaranteed optical, electronic, and structural anisotropy.

詳細(xì)摘要：有序介孔碳-cmk-8 Ordered Mesoporous Carbon - cmk-8
制備方法：模板法
空間群：la3d
比表面積（平方米/克）：720
孔徑（納米）：3.2
總孔體積（立方厘米/克）：~ 1.1
微孔體積（立方厘米/克）：~ 0.02
尺寸（微米）：0