詳細(xì)摘要：Zirconium disulfide （ZrS?） is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form.

詳細(xì)摘要：Tungsten disulfide （2H-WS2） crystals are extremely rare in nature and are less than 10 microns in the quartz / MoS? matrix.

詳細(xì)摘要：一步轉(zhuǎn)移石墨烯（5*5cm單層） Trivial Transfer Graphene

詳細(xì)摘要：Single crystal ReS? （Rhenium disulfide） crystals are developed at our facilities using chemical vapor transport or flux zone technique methods after 9 years of growth optimization to ensure anisotropi

詳細(xì)摘要：Natural MoS2 is an indirect gap semiconductor （1.2 eV） but becomes highly luminescent in the monolayer from at 1.9 eV （quasi-particle / optical band gap）.

詳細(xì)摘要：銅基底石墨烯（進(jìn)口） Graphene on Copper Foil
制備方法：氣相沉積法
化學(xué)氣相沉積石墨烯層：1/2/3~5/6~8
尺寸：可定制

詳細(xì)摘要：塑料基底石墨烯 Graphene on Plastic
說明：石墨烯轉(zhuǎn)移到塑料基材（一個聚合物主要含有聚酯和其他成分（10%））。
表面電阻：小于600Ω/sq
定制：＜300Ω/sq
透明度：> 95%

詳細(xì)摘要：石墨烯紙（非導(dǎo)電） Graphene Film-Super Paper
直徑：40毫米
厚度：20um
電導(dǎo)率：非導(dǎo)電，8x10-2 S / M
拉伸模數(shù)>20 GPa
顏色：黑色，棕色或黃色
易彎曲，靈活

詳細(xì)摘要：多層石墨烯（進(jìn)口） Multi-layer Graphene
CVD石墨烯層數(shù)：2－8
基材：銅箔/硅/二氧化硅/PET/塑料/玻璃/石英

詳細(xì)摘要：石墨烯紙（導(dǎo)電） Graphene Film-Super Paper
直徑：40毫米
厚度：20微米
導(dǎo)電性：2x103s /米
拉伸模數(shù)：>10 GPa
顏色：黑色
高導(dǎo)熱率：> 1000W／m.K
易彎曲，靈活

詳細(xì)摘要：High purtiy WS2 crystals have been I2 （iodine） intercalated to achieve p-type doping.

詳細(xì)摘要：Synthetic MoS2 crystals have been I2 （iodine） intercalated to achieve p-type doping.

詳細(xì)摘要：Our newest class of material: Sb2xAs2（1-x）S3 comes in perfect 1:1:3 stoichiometry consisting of Sb-Sb-S3 atoms.

詳細(xì)摘要：Niobium atoms are perfectly incorporated into ReS? matrix.

詳細(xì)摘要：Rhenium atoms perfectly incorporated into MoS? matrix.

詳細(xì)摘要：Our MoWS2 alloys with the chemical formula MoxW（1-x）S2 crystals perfectly crystallize in 2H phase and come at different alloy ratios x.

詳細(xì)摘要：Molybdenum atoms perfectly incorporated into ReS2 matrix.

詳細(xì)摘要：Niobium atoms are perfectly incorporated into ReS? matrix.

詳細(xì)摘要：CuS is a member of metal chalcogenides （see our GaSe and GaTe products）.

詳細(xì)摘要：Bismuth Telluride Sulfide （Bi?Te?.?S?.?） is developed at our facilities.