供應(yīng)
-
As2Te3 crystals 三碲化砷晶體 詳細(xì)摘要:As2Te3 single crystals are crystallized in the α phase and belongs to monoclinic C2/m space group.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
Bi2-xTlxTe3 - 鈦合金-二碲化鉍晶體 詳細(xì)摘要:The only commercially available topological insulator thalium alloyed BiTlTe (bismuth thallium telluride) crystals.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
NbTe2 crystals 二碲化鈮晶體 詳細(xì)摘要:* environmentally stable metallic NbTe2 crystals: In the bulk form, niobium ditelluride is metallic.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
基于285nm二氧化硅基底的單層氮化硼薄膜 詳細(xì)摘要:Single Layer CVD hexagonal Boron Nitride Film on 285 nm SiO2/Si substrates (p-doped), 1cmx1cm: 4 pack
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言
Properties of BN film
97% coverage with minor holes and organic residues
High Crystalline Quality -
HfTe2 二碲化鉿晶體 (Hafnium ditelluride) 詳細(xì)摘要:Our single crystal HfTe2 (hafnium ditelluride) crystals come with guaranteed crystallinity, environmental stability, and electronic/optical grade purity.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
InTe 碲化銦晶體 (Indium Telluride) 詳細(xì)摘要:The only commercially available layered InTe crystals. In the bulk form (InTe), Indium Telluride, has band-gap at around 0.6 eV and display strong photoluminescence.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
ZrTe2 二碲化鋯晶體 詳細(xì)摘要:ZrTe2 belongs to group-IV TMDCs family and adopts a stable 1T-octahedral structure.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
基于銅基的單層氮化硼薄膜(5*2.5cm) 詳細(xì)摘要:Single layer h-BN (Boron Nitride) film grown in copper foil.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言
h-BN is an insulator with a direct band gap of 5.97 eV. Due to its strong covalent sp2 bonds in the plane, the in-plane mechanical strength -
Telluride 碲化物 詳細(xì)摘要:Our R&D team are about to release new Tellurene nanowires series (in late March,2018), you may pre-order these products when order regular Tellurene single crystals.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
h-BN 氮化硼晶體 詳細(xì)摘要:Our h-BN crystals reach at most to 2mm in size and are considered as gold standard in 2D materials field.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
h-BN Flakes Powder 氮化硼薄片粉末 詳細(xì)摘要:This product contains small crystallites of h-BN layered flakes that can be used for conventional exfoliation process as well as liquid phase h-BN solution manufacturing.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
HOTFILM-HM-熱釋放膠帶 Thermal Release Tapes(半米) 詳細(xì)摘要:產(chǎn)品名稱: 熱轉(zhuǎn)移膠帶 熱釋放膠帶
所在地:上海上海市 更新時(shí)間:2025-03-30 在線留言 -
CVD銅基單層氮化硼薄膜 詳細(xì)摘要:Single layer h-BN (Boron Nitride) monolayer thick film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
GaTe 碲化鎵晶體 (Gallium Telluride) 詳細(xì)摘要:Our single crystal monoclinic GaTe (Gallium telluride) crystals come with guaranteed anisotropy, electronic, and optical grade crystal quality.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
CVD銅基多層氮化硼薄膜(2*2) 詳細(xì)摘要:Multilayer h-BN (Boron Nitride) film is grown onto 50 um thick copper foils. h-BN is an insulator with a direct band gap of 6 eV with strong ionic bonding between B-N atoms.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
HOTFILM-熱剝離膠帶(Thermal Release Tapes) 詳細(xì)摘要:熱釋放膠帶,熱剝離膠帶,發(fā)泡膠。剝離溫度為90℃~100℃,120℃,150℃,拍的時(shí)候,說明哪種溫度,此銷售的膠帶為單面膠帶。用于石墨烯膜、LED、碳納米管、晶圓研磨定位、二維材料轉(zhuǎn)移等領(lǐng)域。
所在地:上海上海市 更新時(shí)間:2025-03-30 在線留言 -
GG-綠色熒光石墨烯量子點(diǎn) Green GQDs 詳細(xì)摘要:綠色熒光石墨烯量子點(diǎn) Green GQDs
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言
制備方法:水熱法
組成:綠色熒光石墨烯量子點(diǎn)
外觀:無色溶液
發(fā)光峰:530納米
粒度:6納米
濃度:1毫克/毫升(可高達(dá)20mg/ml)
解決方法:水,含有少量DMF
規(guī)格:100ml -
CoTe2 碲化鈷晶體 (Cobalt ditelluride) 詳細(xì)摘要:First commercially available CoTe2 crystals.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
FeTe 碲化鐵晶體 (Iron Telluride) 詳細(xì)摘要:Currently, 2D aspect of this material remains largely unexplored. Iron Telluride (FeTe) is a member of layered materials.
所在地:江蘇泰州市 更新時(shí)間:2025-03-30 在線留言 -
BOXC-機(jī)械剝離工具套裝(旗艦版) 詳細(xì)摘要:機(jī)械剝離工具套裝(旗艦版)
所在地:上海上海市 更新時(shí)間:2025-03-30 在線留言