詳細摘要：Bismuth sulfide （Bi?S?） Developed at our facilities in the last five （5） years to optimize the perfect stoichiometry.

詳細摘要：As2S3 comes in perfect 2:3 stoichiometry.

詳細摘要：硫磷化銅（銦摻雜）晶體（99.995%） CuInP2S6
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：
FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細摘要：三硫化鎳（磷摻雜）晶體（99.995%） NiPS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：
FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細摘要：三硫化錳（磷摻雜）晶體（99.995%） MnPS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：
FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細摘要：三硫化鐵（磷摻雜）晶體（99.995%） FePS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：
FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細摘要：Single crystal highly oriented -synthetic- molybdenum disulfide （2H-MoS?） comes in bulk.

詳細摘要：三硫化鈮晶體（99.995%） NbS3
晶體類型：合成
晶體純度：＞99.995%
低維材料層狀過渡金屬化合物材料，新增材料：FeCl2,NbS3,GaTeI,InSe,CuInP2S6,WSSe,Fe3GeTe2,NiI2,FePS3,MnPSe3,MnPS3,NiPS3,PdSe2

詳細摘要：硫鹽礦物晶體 Pb3Sn4FeSb2S14（Lead Tin Ferrum Antimony Sulfide）
晶體結構：六邊形
類型：合成
尺寸：~8mm
純度：>99.995%
屬性：超導體

詳細摘要：Rhenium atoms perfectly incorporated into MoS? matrix.

詳細摘要：Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns. As shown in th

詳細摘要：Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns.

詳細摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique. Growth technique emphasizes on minimizing the defect density to yi

詳細摘要：Carboxyl （-COOH） functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form

詳細摘要：二硫化鉛錫晶體 PbSnS2（Lead Tin Disulfide）
晶體結構：六邊形
類型：天然晶體
尺寸：~8mm
純度：>99.995%
屬性：半導體

詳細摘要：Nitrogen doped graphene has been created at our facilities. Ideal for exfoliation. Nitrogen doping is fixed at 1.5-2% and the lateral sizes of the flakes can reach more than 50 microns.

詳細摘要：Graphene fluoride has been developed our facilities. Carbon to Fluoride ratio is 1:1 and the particle size ranges from 1-15 microns. Electrical resistivity is 1E11-1E12 Ohm.cm.

詳細摘要：二硫化鉬晶體（天然） MoS2（Molybdenum Disulfide）
晶體結構：六邊形
類型：天然晶體
尺寸：~10mm-20mm
純度：>99%
屬性：半導體

詳細摘要：Semiconductor analog of graphene: Graphene oxide has been synthesized at our R&D facilities using modified reaction Hummer technique.

詳細摘要：Carboxyl （-COOH） functionalized graphene has been developed at our facilities. Can be deposited on various substrates either by conventional mechanical exfoliation or spin coating in the solution form